dc.creator | Lebedev, Vladim B. | es |
dc.creator | Cimalla, Volker | es |
dc.creator | Pezoldt, J. | es |
dc.creator | Himmerlich, Marcel | es |
dc.creator | Krischok, Stefan | es |
dc.creator | Lozano Suárez, Juan Gabriel | es |
dc.creator | González Robledo, David | es |
dc.date.accessioned | 2021-10-07T16:11:37Z | |
dc.date.available | 2021-10-07T16:11:37Z | |
dc.date.issued | 2006-11 | |
dc.identifier.citation | Lebedev, V.B., Cimalla, V., Pezoldt, J., Himmerlich, M., Krischok, S., Lozano Suárez, J.G. y González Robledo, D. (2006). Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network. Journal of Applied Physics, 100 (9), 094902-1-094902-13. | |
dc.identifier.issn | ISSN: 0021-8979 | es |
dc.identifier.issn | eISSN:1089-7550 | es |
dc.identifier.uri | https://hdl.handle.net/11441/126510 | |
dc.description.abstract | The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers
during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by
reflection high-energy electron diffraction, transmission electron microscopy, and high resolution
x-ray diffraction. Characterization of the surface properties has been performed using atomic force
microscopy and photoelectron spectroscopy. In the framework of the growth model the following
stages of the strain relief have been proposed: plastic relaxation of strain by the introduction of
geometric misfit dislocations, elastic strain relief during island growth, formation of threading
dislocations induced by the coalescence of the islands, and relaxation of elastic strain by the
introduction of secondary misfit dislocations. The model emphasizes the determining role of the
coalescence process in the formation of a dislocation network in heteroepitaxially grown 2H-InN.
Edge-type threading dislocations and dislocations of mixed character have been found to be
dominating defects in the wurtzite InN layers. It has been shown that the threading dislocation
density decreases exponentially during the film growth due to recombination and, hence,
annihilation of dislocations, reaching 109 cm−2 for 2200 nm thick InN films. | es |
dc.description.sponsorship | Unión Europea NMP4-CT2003-505614 | es |
dc.description.sponsorship | Unión Europea NMP4-CT-2004-500101 | es |
dc.description.sponsorship | Comisión Interministerial de Ciencia y Tecnología MAT2004-01234 España | es |
dc.format | application/pdf | es |
dc.format.extent | 13 p. | es |
dc.language.iso | eng | es |
dc.publisher | American Institute of Physics | es |
dc.relation.ispartof | Journal of Applied Physics, 100 (9), 094902-1-094902-13. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Threading Dislocations | es |
dc.subject | Epitaxial Multilayers | es |
dc.subject | Crystal Interfaces | es |
dc.subject | Defects | es |
dc.title | Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte | es |
dc.relation.projectID | NMP4-CT2003-505614 | es |
dc.relation.projectID | NMP4-CT-2004-500101 | es |
dc.relation.projectID | MAT2004-01234 España | es |
dc.relation.publisherversion | https://doi.org/10.1063/1.2363233 | es |
dc.identifier.doi | 10.1063/1.2363233 | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 100 | es |
dc.publication.issue | 9 | es |
dc.publication.initialPage | 094902-1 | es |
dc.publication.endPage | 094902-13 | es |
dc.identifier.sisius | 6699990 | es |
dc.contributor.funder | European Union (UE) | es |
dc.contributor.funder | Comisión Interministerial de Ciencia y Tecnología (CICYT). España | es |