dc.creator | Casey, Patrick | es |
dc.creator | Bogan, Justin | es |
dc.creator | Lozano Suárez, Juan Gabriel | es |
dc.creator | Nellist, Peter | es |
dc.creator | Hughes, G. | es |
dc.date.accessioned | 2021-09-16T16:46:11Z | |
dc.date.available | 2021-09-16T16:46:11Z | |
dc.date.issued | 2011-09 | |
dc.identifier.citation | Casey, P., Bogan, J., Lozano Suárez, J.G., Nellist, P. y Hughes, G. (2011). Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO2. Journal of Applied Physics, 110 (5), 054507-1-054507-6. | |
dc.identifier.issn | ISSN: 0021-8979 | es |
dc.identifier.issn | eISSN: 1089-7550 | es |
dc.identifier.uri | https://hdl.handle.net/11441/125927 | |
dc.description.abstract | In this study, Mn silicate (MnSiO3) barrier layers were formed on thermally grown SiO2 using both
metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the
extent of the interaction between the deposited Mn and the SiO2 substrate. Using x-ray photoelectron
spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm
cannot be fully converted to Mn silicate following vacuum annealing to 500 C. Transmission
electron microscopy (TEM) analysis suggests the maximum MnSiO3 layer thickness obtainable using
metallic Mn is 1.7 nm. In contrast, a 1 nm partially oxidized Mn film can be fully converted to
Mn silicate following thermal annealing to 400 C, forming a MnSiO3 layer with a measured
thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO3 growth results in a corresponding
reduction in the SiO2 layer thickness. It has also been shown that a fully oxidized Mn oxide thin film
can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested
that the presence of Mn oxide species at the Mn/SiO2 interface facilitates the conversion of SiO2 to
MnSiO3, in agreement with previously published studies. | es |
dc.description.sponsorship | Fundación de Ciencias de Irlanda 08/IN.1/I2052 | |
dc.format | application/pdf | es |
dc.format.extent | 6 p. | es |
dc.language.iso | eng | es |
dc.publisher | American Institute of Physics | es |
dc.relation.ispartof | Journal of Applied Physics, 110 (5), 054507-1-054507-6. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Vapor-Deposition | es |
dc.subject | Oxidation | es |
dc.title | Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO2 | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte | es |
dc.relation.projectID | 08/IN.1/I2052 | |
dc.relation.publisherversion | https://doi.org/10.1063/1.3630123 | es |
dc.identifier.doi | 10.1063/1.3630123 | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 110 | es |
dc.publication.issue | 5 | es |
dc.publication.initialPage | 054507-1 | es |
dc.publication.endPage | 054507-6 | |
dc.identifier.sisius | 21901247 | es |
dc.contributor.funder | Science Foundation Ireland | |