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dc.creatorCasey, Patrickes
dc.creatorBogan, Justines
dc.creatorLozano Suárez, Juan Gabrieles
dc.creatorNellist, Peteres
dc.creatorHughes, G.es
dc.date.accessioned2021-09-16T16:46:11Z
dc.date.available2021-09-16T16:46:11Z
dc.date.issued2011-09
dc.identifier.citationCasey, P., Bogan, J., Lozano Suárez, J.G., Nellist, P. y Hughes, G. (2011). Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO2. Journal of Applied Physics, 110 (5), 054507-1-054507-6.
dc.identifier.issnISSN: 0021-8979es
dc.identifier.issneISSN: 1089-7550es
dc.identifier.urihttps://hdl.handle.net/11441/125927
dc.description.abstractIn this study, Mn silicate (MnSiO3) barrier layers were formed on thermally grown SiO2 using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO2 substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO3 layer thickness obtainable using metallic Mn is 1.7 nm. In contrast, a 1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 C, forming a MnSiO3 layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO3 growth results in a corresponding reduction in the SiO2 layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO2 interface facilitates the conversion of SiO2 to MnSiO3, in agreement with previously published studies.es
dc.description.sponsorshipFundación de Ciencias de Irlanda 08/IN.1/I2052
dc.formatapplication/pdfes
dc.format.extent6 p.es
dc.language.isoenges
dc.publisherAmerican Institute of Physicses
dc.relation.ispartofJournal of Applied Physics, 110 (5), 054507-1-054507-6.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectVapor-Depositiones
dc.subjectOxidationes
dc.titleChemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO2es
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transportees
dc.relation.projectID08/IN.1/I2052
dc.relation.publisherversionhttps://doi.org/10.1063/1.3630123es
dc.identifier.doi10.1063/1.3630123es
dc.journaltitleJournal of Applied Physicses
dc.publication.volumen110es
dc.publication.issue5es
dc.publication.initialPage054507-1es
dc.publication.endPage054507-6
dc.identifier.sisius21901247es
dc.contributor.funderScience Foundation Ireland

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