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Artículo
High resolution electron microscopy of GaAs capped GaSb nanostructures
(American Institute of Physics, 2009-01)
We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small with heights of about 1 nm GaAsₓxSb₁₋ₓ nanostructures surrounded by a GaAs rich layer. This ...