Buscar
Mostrando ítems 1-2 de 2
Artículo
Incorporation of Sb in InAs/GaAs quantum dots
(American Institute of Physics, 2007)
The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially ...
Artículo
High resolution electron microscopy of GaAs capped GaSb nanostructures
(American Institute of Physics, 2009-01)
We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small with heights of about 1 nm GaAsₓxSb₁₋ₓ nanostructures surrounded by a GaAs rich layer. This ...