Browsing Artículos (Instituto de Microelectrónica de Sevilla (IMSE-CNM)) by Subject "Bias temperature instability (BTI)"
Now showing items 1-3 of 3
-
Article
Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs
(IEEE, 2022)The origin of some Time-Dependent Variability phenomena in FET technologies has been attributed to the charge carrier ...
-
Article
Flexible Setup for the Measurement of CMOS Time-Dependent Variability with Array-Based Integrated Circuits
(IEEE, 2020)This paper presents an innovative and automated measurement setup for the characterization of variability effects in CMOS ...
-
Article
Statistical characterization of time-dependent variability defects using the maximum current fluctuation
(Institute of Electrical and Electronics Engineers, 2021-06-17)This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the ...