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Competing misfit relaxation mechanisms in epitaxial correlated oxides

Opened Access Competing misfit relaxation mechanisms in epitaxial correlated oxides

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Autor: Sandiumenge, Felip
Santiso, José
Balcells, Lluis
Konstantinović, Z.
Roqueta, Jaume
Pomar, Alberto
Espinós Manzorro, Juan Pedro
Martínez Perea, Benjamín
Departamento: Universidad de Sevilla. Departamento de Química Inorgánica
Fecha: 2013
Publicado en: Physical Review Letters, 110, 1-5.
Tipo de documento: Artículo
Resumen: Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La 0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn-O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e., the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering
Cita: Sandiumenge, F., Santiso, J., Balcells, L., Konstantinović, Z., Roqueta, J., Pomar, A.,...,Martínez Perea, B. (2013). Competing misfit relaxation mechanisms in epitaxial correlated oxides. Physical Review Letters, 110, 1-5.
Tamaño: 1.384Mb
Formato: PDF

URI: https://hdl.handle.net/11441/73632

DOI: 10.1103/PhysRevLett.110.107206

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