High N-content a-C:N films elaborated by femtosecond PLD with plasma assistance

Abstract

Amorphous carbon nitride (a-C:N) thin films are a interesting class of carbon-based electrode materials. Therefore, synthesis and characterization of these materials have found lot of interest in environmental analytical microsystems. Herein, we report the nitrogen-doped amorphous carbon thin film elaboration by femtosecond pulsed laser deposition (fs-PLD) both with and without a plasma assistance. The chemical composition and atomic bonding configuration of the films were investigated by multi-wavelength (MW) Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). The highest nitrogen content, 28 at.%, was obtained with plasma assistance. The I(D)/I(G) ratio and the G peak position increased as a function of nitrogen concentration, whereas the dispersion and full width at half maximum (FWHM) of G peak decreased. This indicates more ordered graphitic like structures in the films both in terms of topological and structural, depending on the nitrogen content. EELS investigations were correlated with MW Raman results. The interpretation of XPS spectra of carbon nitride films remains a challenge. Plasma assisted PLD in the femtosecond regime led to a significant high nitrogen concentration, which is highlighted on the basis of collisional processes in the carbon plasma plume interacting with the nitrogen plasma.