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Ponencia
MS-3-P-5702 Nanoanalytical investigations at the interface of 4H-SiC/SiO2 MOSFETs [Póster]
(Czechoslovak Microscopy Society, 2014)
Ponencia
Heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]
(2017)
Diamond is a unique semiconductor with a wide bandgap which is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal ...
Ponencia
Compositional characterization of SiC-SiO2 interfaces in MOSFETs
(The Royal Microscopical Society, 2012)
In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the ...