Buscar
Mostrando ítems 1-7 de 7
Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
(American Institute of Physics, 2006-11)
The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy ...
Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
(American Institute of Physics, 2006-11)
The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN 0001 pseudosubstrates is reported. The microstructure and the electron transport in InN ...
Artículo
Estimación del límite de fatiga de carburos cementados WC-Co en el marco de la mecánica de la fractura elástica lineal
(Sociedad Española de Cerámica y Vidrio, 2004)
En este trabajo se investiga el comportamiento a fractura y fatiga de dos grados de carburos cementados WC-Co con distintos contenidos de fase ligante y tamaño de carburo medio. La caracterización mecánica incluye la ...
Artículo
Coalescence aspects of III-nitride epitaxy
(American Institute of Physics, 2007-03)
In this work, coalescence aspects of wurtzite-III-nitride epitaxy are addressed. The coalescence phenomena have been studied in thin epilayers by means of electron and atomic force microscopies, and electron and x-ray ...
Artículo
Structural changes during the natural aging process of InN quantum dots
(American Institute of Physics, 2009-01)
The natural aging process of InN nanostructures by the formation of indium oxides is examined by transmission electron microscopy related techniques. Uncapped and GaN-capped InN quantum dots (QDs) on GaN/sapphire substrates ...
Artículo
Obtención y procesado de aleaciones de grano ultrafino, nanométrico y amorfas mediante aleado mecánico
(Centro nacional de Investigaciones Metalurgicas, 2007)
El Grupo de Metalurgia e Ingeniería de los Materiales de la Universidad de Sevilla ha desarrollado, durante los últimos quince años, diversas técnicas para la consolidación de aleaciones de aluminio obtenidas por aleado ...
Artículo
Electronic and photoconductive properties of ultrathin InGaN photodetectors
(American Institute of Physics, 2008-04)
We report on the compositional dependencies of electron transport and photoconductive properties for ultrathin metal-semiconductor-metal photodetectors based on In-rich InxGa1-xN alloys. For a In0.64Ga0.36N/GaN structure, ...