Now showing items 1-2 of 2

    • IconCompositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy  [Article]

      Beltrán, A.M.; Ben, Teresa; Sánchez, A. M.; Gass, M.H.; Taboada, Alfonso G.; Ripalda, José María; Molina, Sergio I. (Institute of Physics Publishing, 2013)
      As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAsGaSb system, since in this energy range the edges ...
    • IconIncorporation of Sb in InAs/GaAs quantum dots  [Article]

      Molina, Sergio I.; Sánchez, A. M.; Beltrán, A.M.; Sales, David L.; Ben, Teresa; Chisholm, M. F.; Varela, María; Pennycook, Stephen J.; Galindo, P. L.; Papworth, A. J.; Goodhew, P. J.; Ripalda, José María (American Institute of Physics, 2007)
      The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially ...