Now showing items 1-3 of 3

    • IconCompositional characterization of SiC-SiO2 interfaces in MOSFETs  [Presentation]

      Beltrán, A.M.; Schamm-Chardon, Sylvie; Mortet, Vincent; Bedel-Pereira, Eléna; Cristiano, Fuccio; Strenger, C.; Bauer, A.J. (The Royal Microscopical Society, 2012)
      In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the ...
    • IconHeavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]  [Presentation]

      Taylor, Andy; Ashcheulov, Petr; Hubík, Pavel; Klimša, Ladislav; Kopeček, Jaromír; Zivcova, Zuzana Vlckova; Remzová, M.; Kavan, L.; Beltrán, A.M.; Mortet, Vincent (2017)
      Diamond is a unique semiconductor with a wide bandgap which is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal ...
    • IconMS-3-P-5702 Nanoanalytical investigations at the interface of 4H-SiC/SiO2 MOSFETs [Póster]  [Presentation]

      Tan, H.; Beltrán, A.M.; March, K.; Mortet, Vincent; Bedel-Pereira, Eléna; Cristiano, Fuccio; Strenger, C.; Bauer, A.J.; Schamm-Chardon, Sylvie (Czechoslovak Microscopy Society, 2014)