Ponencia
A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology
Autor/es | Brandano, Davide
Delgado Restituto, Manuel Ruiz Amaya, Jesús Rodríguez Vázquez, Ángel Benito |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2007 |
Fecha de depósito | 2019-12-04 |
Publicado en |
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ISBN/ISSN | 978-1-4244-1341-6 |
Resumen | An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB ... An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S 11 , S 22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP 3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry. |
Identificador del proyecto | TIC2003-02355
TEC2006-03022 |
Cita | Brandano, D., Delgado Restituto, M., Ruiz Amaya, J. y Rodríguez Vázquez, Á.B. (2007). A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology. En 18th European Conference on Circuit Theory and Design (72-75), Sevilla, España: Institute of Electrical and Electronics Engineers. |
Ficheros | Tamaño | Formato | Ver | Descripción |
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A 5.3mW 2.4GHz ESD Protected.pdf | 467.8Kb | [PDF] | Ver/ | |