dc.creator | Battistig, G. | es |
dc.creator | Khánh, N. Q. | es |
dc.creator | Petrik, P. | es |
dc.creator | Lohner, T. | es |
dc.creator | Dobos, L. | es |
dc.creator | Pécz, B. | es |
dc.creator | García López, Francisco Javier | es |
dc.creator | Morilla García, Yolanda | es |
dc.date.accessioned | 2019-10-25T10:08:15Z | |
dc.date.available | 2019-10-25T10:08:15Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Battistig, G., Khánh, N.Q., Petrik, P., Lohner, T., Dobos, L., Pécz, B.,...,Morilla García, Y. (2006). A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy. Journal of Applied Physics, 100 (9), 093507. | |
dc.identifier.issn | 0021-8979 | es |
dc.identifier.issn | 1089-7550 | es |
dc.identifier.uri | https://hdl.handle.net/11441/89904 | |
dc.description.abstract | 4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions
using fluences of 4 1014, 1 1015, and 2 1015 cm−2 with current density of 2.5 A cm−2. The
samples were subsequently annealed at 1100 °C in N2 for 1 h in order to analyze their structural
recovery. The disorder induced in both sublattices by the Al+ ions was studied by backscattering
spectrometry in channeling geometry with a 3.5 MeV He2+ beam. The results were compared with
the optical properties of the samples measured by spectroscopic ellipsometry. In a previous work,
we concluded that during the postimplantation annealing of a highly damaged SiC crystalline
material the short distance order can be recovered, while the long distance disorder remains. We also
presented the possibility to have grains of different polytypes oriented faraway from the original
direction. Now, this alternative is confirmed by the cross-sectional transmission and high resolution
electron microscopy studies, carried out to obtain information about the crystal structure. | es |
dc.description.sponsorship | Ministerio de Cienncias y Tecnología español-MAT2002-02843 (70% de fondos FEDER) | es |
dc.description.sponsorship | Acuerdo de Colaboración Científica Húngaro-Españo-lE27 / 2001 | es |
dc.description.sponsorship | Fondo de Investigaciones Científicas de Hungría (OTKA)-T032029, T047011, T043704 y K61725 | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | AIP Publishing | es |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.title | A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear | es |
dc.relation.projectID | MAT2002-02843 | es |
dc.relation.projectID | lE27 / 2001 | es |
dc.relation.projectID | T032029 | es |
dc.relation.projectID | T047011 | es |
dc.relation.projectID | T043704 | es |
dc.relation.projectID | K61725 | es |
dc.relation.publisherversion | https://doi.org/10.1063/1.2360150 | es |
dc.identifier.doi | 10.1063/1.2360150 | es |
idus.format.extent | 6 p. | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 100 | es |
dc.publication.issue | 9 | es |
dc.publication.initialPage | 093507 | es |
dc.identifier.sisius | 6699992 | es |