dc.creator | Céspedes, E. | es |
dc.creator | Román, E. | es |
dc.creator | Huttel, Yves | es |
dc.creator | Chaboy Nalda, Jesús | es |
dc.creator | García López, Francisco Javier | es |
dc.creator | Andrés, A. de | es |
dc.creator | Prieto, C. | es |
dc.date.accessioned | 2019-10-23T09:08:37Z | |
dc.date.available | 2019-10-23T09:08:37Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Céspedes, E., Román, E., Huttel, Y., Chaboy Nalda, J., García López, F.J., Andrés, A.d. y Prieto, C. (2009). Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers. Journal of Applied Physics, 106 (4), 04391. | |
dc.identifier.issn | 0021-8979 | es |
dc.identifier.issn | 1089-7550 | es |
dc.identifier.uri | https://hdl.handle.net/11441/89825 | |
dc.description.abstract | Room temperature ferromagnetism has been obtained for different sets of Mn/Si3N4 multilayers
prepared by sputtering. In order to find the most suitable conditions to stabilize the ferromagnetic
ordering in this system, the evolution of the magnetic properties has been studied for films in which
the Si3N4 layer thickness was maintained constant while that of the Mn layer was varied,
Mn tm/Si3N4 3.4 nm n, and conversely, in Mn 0.7 nm/Si3N4 tsn 43 samples, in which the Mn
layer thickness was kept constant while varying the Si3N4 layer thickness. Structural, compositional,
electronic and magnetic characterizations have been performed by means of x-ray reflectometry,
Rutherford backscattering spectrometry, x-ray photoemission spectroscopy, x-ray absorption, and
superconducting quantum interference device for further knowledge of the magnetic-structural
relationship in this system. Our results show that the peculiar magnetic behavior of these films is
mainly related to the stabilization of a slightly distorted Mn3N2 phase that is induced by the Si3N4
at the interfaces. For samples with larger Mn layer thickness, metallic Mn and Mn3N2 phases
coexist, which leads to a reduction of the total magnetization per Mn atom due to the presence of
metallic Mn. For small Mn layer thickness tm 0.86 nm, where noncontinuous Mn3N2 layers are
formed, the magnetization decreases noticeably due to the superparamagnetic size limit. It has been
found that the best conditions for the stabilization of the ferromagnetism in this system occur when
both, the manganese-rich and the silicon nitride layers, are continuous and with similar thickness,
close to 3.5 nm. | es |
dc.description.sponsorship | Ministerio de Educación y Ciencia de España-MAT2006-01004, MAT2008-06542-C04-01, MAT2008-06765-C02-02, S-0505/MAT/0194, Consolider 2010_26400 y Nanoselect CSD2007-00041 | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | AIP Publishing | es |
dc.relation.ispartof | Journal of Applied Physics, 106 (4), 043912. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.title | Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers | es |
dc.type | info:eu-repo/semantics/article | es |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear | es |
dc.relation.projectID | MAT2006-01004 | es |
dc.relation.projectID | MAT2008-06542-C04-01 | es |
dc.relation.projectID | MAT2008-06765-C02-02 | es |
dc.relation.projectID | S-0505/MAT/0194 | es |
dc.relation.projectID | Consolider 2010_26400 | es |
dc.relation.projectID | Nanoselect CSD2007-00041 | es |
dc.relation.publisherversion | https://doi.org/10.1063/1.3203997 | es |
dc.identifier.doi | 10.1063/1.3203997 | es |
idus.format.extent | 11 p. | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 106 | es |
dc.publication.issue | 4 | es |
dc.publication.initialPage | 043912 | es |