Mostrar el registro sencillo del ítem

Artículo

dc.creatorParra Barranco, Juliánes
dc.creatorSánchez Valencia, Juan Ramónes
dc.creatorGarcía García, Francisco Javieres
dc.creatorLópez Santos, Carmenes
dc.creatorGonzález-Elipe, Agustín R.es
dc.creatorAparicio Rebollo, Francisco Javieres
dc.creatorRico-Gavira, Víctor Joaquínes
dc.creatorBarranco Quero, Ángeles
dc.creatorFerrer Fernández, Francisco Javieres
dc.creatorBorrás Martos, Ana Isabeles
dc.date.accessioned2018-03-19T11:27:35Z
dc.date.available2018-03-19T11:27:35Z
dc.date.issued2017
dc.identifier.citationParra Barranco, J., Sánchez Valencia, J.R., García García, F.J., López Santos, C., González-Elipe, A.R., Aparicio Rebollo, F.J.,...,Borrás Martos, A.I. (2017). Plasma Assisted Oblique Angle Deposition of Transparent and Conductive in- Plane Anisotropic ITO Thin Films. ECS Transactions, 77 (3), 9-15. https://doi.org/10.1149/07703.0009ecst.
dc.identifier.issn1938-5862es
dc.identifier.urihttps://hdl.handle.net/11441/71073
dc.description.abstractOblique angle deposition (OAD) is a powerful technique for the fabrication of porous nanostructured oxide thin films. OAD films typically present a columnar tilted nanostructure due to geometrical shadowing effects during the thin film growth. In this work, we study the fabrication of transparent and conducting indium tin oxide films (ITO) by OAD assisted by a microwave ECR plasma. The objective of assisting the deposition with a plasma discharge is to modify the growth mechanism of the OAD process introducing additional parameters to control the columnar microstructure, composition, porosity of the films. The results indicate the OAD ITO deposition assisted by the plasma discharge is a very effective process to develop in-plane structural anisotropy in the ITO nanocolumnar films what determines their electrical properties.es
dc.description.sponsorshipEspaña MINECO-AEI MAT2016-79866-R, MAT2013-40852-R, MAT2013-42900-Pes
dc.description.sponsorshipEspaña MINECO-CSIC 201560E055, IJCI-2014-21226,es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherElectrochemical Societyes
dc.relation.ispartofECS Transactions, 77 (3), 9-15.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titlePlasma Assisted Oblique Angle Deposition of Transparent and Conductive in- Plane Anisotropic ITO Thin Filmses
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Fíca Aplicada Ies
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Física Atómica, Molecular y Nucleares
dc.relation.projectIDMAT2016-79866-Res
dc.relation.projectIDMAT2013-40852-Res
dc.relation.projectIDMAT2013-42900-Pes
dc.relation.projectID201560E055es
dc.relation.projectIDIJCI-2014-21226es
dc.relation.publisherversionhttp://dx.doi.org/10.1149/07703.0009ecstes
dc.identifier.doi10.1149/07703.0009ecstes
idus.format.extent6 p.es
dc.journaltitleECS Transactionses
dc.publication.volumen77es
dc.publication.issue3es
dc.publication.initialPage9es
dc.publication.endPage15es
dc.contributor.funderMinisterio de Economía y Competitividad (MINECO). España

FicherosTamañoFormatoVerDescripción
Plasma Assisted Oblique.pdf610.9KbIcon   [PDF] Ver/Abrir  

Este registro aparece en las siguientes colecciones

Mostrar el registro sencillo del ítem

Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Excepto si se señala otra cosa, la licencia del ítem se describe como: Attribution-NonCommercial-NoDerivatives 4.0 Internacional