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dc.creatorGuzmán, Hugo
dc.creatorBarrero, Federico
dc.creatorDurán, Mario J.
dc.date.accessioned2016-02-16T13:45:14Z
dc.date.available2016-02-16T13:45:14Z
dc.date.issued2015
dc.identifier.issn0278-0046es
dc.identifier.urihttp://hdl.handle.net/11441/34896
dc.description.abstractMultiphase machine drives are gaining importance in high-reliability applications due to their fault-tolerance capability and their ability to cope with the postfault operation without any extra electronic components. Predictive current controllers have been recently proposed for managing postfault operation of these drives when an open-phase fault is considered. However, the faulty situation assumes zero stator current while freewheeling diodes can continue conducting in a noncontrolled mode. This work analyzes the postfault operation of the five-phase drive when the freewheeling diodes of the faulty phase are still conducting. Experimental results are provided using a conventional insulated-gate bipolar transistor (IGBT)-based multiphase power converter to quantify the effect of the freewheeling diodes, when an IGBT-gating fault occurs, on the model-based predictive current-controlled drive.es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)es
dc.relation.ispartofIEEE Transactions on Industrial Electronics, 62 (1), 15-20es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectMultiphase driveses
dc.subjectPost-fault operationes
dc.subjectFault-tolerancees
dc.subjectIGBT gating faultes
dc.subjectFree-wheeling diodeses
dc.subjectPredictive controllerses
dc.titleIGBT-gating failure effect on a fault-tolerant predictive current-controlled five-phase induction motor drivees
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Ingeniería Electrónicaes
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6834808es
dc.identifier.doihttp://dx.doi.org/10.1109/TIE.2014.2331019es
dc.identifier.idushttps://idus.us.es/xmlui/handle/11441/34896

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