Mostrar el registro sencillo del ítem

Artículo

dc.creatorTan, Binges
dc.creatorReyes, Abdul M.es
dc.creatorMenéndez-Proupin, Eduardoes
dc.creatorReyes-Lillo, Sebastián E.es
dc.creatorLi, Yanboes
dc.creatorZhang, Zemines
dc.date.accessioned2024-04-23T08:39:06Z
dc.date.available2024-04-23T08:39:06Z
dc.date.issued2022-09
dc.identifier.issn2380-8195es
dc.identifier.urihttps://hdl.handle.net/11441/156997
dc.description.abstractSolar–fuel conversion depends on effective collection of photocarriers in the photoelectrode. In practice, however, considerable photocarriers are lost in the bulk through recombination due to the absence of a driving force. To overcome this, herein, a full-space electric field is induced in BiFeO₃ photocathodes by building a gradient homojunction through Fermi level engineering. As expected, the BiFeO₃ photocathodes with forward electric field show significantly enhanced performance: a state-of-the-art photocurrent of −1.02 mA·cm⁻² at 0.5 V vs RHE and H₂O₂ production of 380 mmol·(L·m²)⁻¹ within 50 min. First-principles calculations and experimental analysis suggest that the Bi vacancies as shallow acceptors can significantly modulate the Fermi level of BiFeO₃. The resulting internal electric field serves as an additional driving force to promote charge collection. This work provides an approach to induce a full-space electric field in semiconductor films through gradient defects modulation, which can be broadly applied to other optoelectronic systems.es
dc.formatapplication/pdfes
dc.format.extent8 p.es
dc.language.isoenges
dc.publisherAmerican Chemical Societyes
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectBismuth ferritees
dc.subjectDefects in solidses
dc.subjectElectric fieldses
dc.subjectPhotonicses
dc.subjectThin filmsShow Lesses
dc.titleFull-space potential gradient driven charge migration inside BiFeO₃ Photocathodees
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Física Aplicada Ies
dc.relation.projectIDANID FONDECYT 1220986es
dc.relation.projectIDNLHPC ECM-02es
dc.relation.publisherversionhttps://pubs.acs.org/doi/10.1021/acsenergylett.2c01750es
dc.identifier.doi10.1021/acsenergylett.2c01750es
dc.contributor.groupUniversidad de Sevilla. FQM401: Simulación y Aplicación de Materialeses
dc.journaltitleACS Energy Letterses
dc.publication.volumen7es
dc.publication.issue10es
dc.publication.initialPage3492es
dc.publication.endPage3499es
dc.contributor.funderFondo Nacional de Desarrollo Científico y Tecnológico, Fondecyt. Chilees
dc.contributor.funderLaboratorio Nacional de Computación de Alto Rendimiento (NLHPC). Chilees

FicherosTamañoFormatoVerDescripción
AM_AIMS_2.pdf129.9KbIcon   [PDF] Ver/Abrir  
ACSEL_menendez-proupin_2022_fu ...4.583MbIcon   [PDF] Ver/Abrir  

Este registro aparece en las siguientes colecciones

Mostrar el registro sencillo del ítem

Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Excepto si se señala otra cosa, la licencia del ítem se describe como: Attribution-NonCommercial-NoDerivatives 4.0 Internacional