dc.creator | Ramírez Angulo, Jaime | es |
dc.creator | Paul, Anindita | es |
dc.creator | Gangineni, Manaswini | es |
dc.creator | Hinojo Montero, José María | es |
dc.creator | Huerta Chua, Jesús | es |
dc.date.accessioned | 2023-09-05T14:02:40Z | |
dc.date.available | 2023-09-05T14:02:40Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Ramírez Angulo, J., Paul, A., Gangineni, M., Hinojo Montero, J.M. y Huerta Chua, J. (2023). Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower. Journal of Low Power Electronics and Applications, 13 (2), 28. https://doi.org/10.3390/jlpea13020028. | |
dc.identifier.issn | 2079-9268 | es |
dc.identifier.uri | https://hdl.handle.net/11441/148654 | |
dc.description | This article is an open access article
distributed under the terms and
conditions of the Creative Commons
Attribution (CC BY) license (https://
creativecommons.org/licenses/by/
4.0/). | es |
dc.description.abstract | The application of the flipped voltage follower to implement two high-performance circuits
is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew
rate and an improved bandwidth by very large factors and that has a higher output range than the
conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/μW
and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an addi-
tional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect
Transistor) that provides dynamic output current enhancement and increases the quiescent power
dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with
a nominal gain accuracy better than 0.01%, 0.212 Ω input resistance, 112 GΩ output resistance,
1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These char-
acteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the
power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a
commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology. | es |
dc.format | application/pdf | es |
dc.format.extent | 17 p. | es |
dc.language.iso | eng | es |
dc.publisher | MDPI | es |
dc.relation.ispartof | Journal of Low Power Electronics and Applications, 13 (2), 28. | |
dc.rights | Atribución 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | * |
dc.subject | Buffer | es |
dc.subject | Flipped voltage follower | es |
dc.subject | CMOS analog integrated circuits | es |
dc.subject | Current mirror | es |
dc.title | Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Ingeniería Electrónica | es |
dc.relation.publisherversion | https://www.mdpi.com/2079-9268/13/2/28 | es |
dc.identifier.doi | 10.3390/jlpea13020028 | es |
dc.contributor.group | Universidad de Sevilla. TIC192: Ingeniería Electrónica | es |
dc.journaltitle | Journal of Low Power Electronics and Applications | es |
dc.publication.volumen | 13 | es |
dc.publication.issue | 2 | es |
dc.publication.initialPage | 28 | es |