dc.creator | Arca Cebrián, Francisco | es |
dc.creator | Méndez Granado, Juan Pedro | es |
dc.creator | Ortiz, Michael | es |
dc.creator | Ariza Moreno, María del Pilar | es |
dc.date.accessioned | 2022-07-19T11:23:01Z | |
dc.date.available | 2022-07-19T11:23:01Z | |
dc.date.issued | 2022-08 | |
dc.identifier.citation | Arca Cebrián, F., Méndez, J.P., Ortiz, M. y Ariza Moreno, M.d.P. (2022). Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene. Acta Materialia, 234, 117987. | |
dc.identifier.issn | 1359-6454 | es |
dc.identifier.uri | https://hdl.handle.net/11441/135572 | |
dc.description | 117987 | es |
dc.description.abstract | We show, through the use of the Landauer-Büttiker (LB) formalism and a tight-binding (TB) model, that the transport gap of twinned graphene can be tuned through the application of a uniaxial strain in the direction normal to the twin band. Remarkably, we find that the transport gap Egap bears a square-root dependence on the control parameter x − c , where x is the applied uniaxial strain and c ∼ 19% is a critical strain. We interpret this dependence as evidence of criticality underlying a continuous phase transition, with x − c playing the role of control parameter and the transport gap Egap playing the role of order parameter. For x < c , the transport gap is non-zero and the material is semiconductor, whereas for x > c the transport gap closes to zero and the material becomes conductor, which evinces a semiconductor-to-conductor phase transition. The computed critical exponent of 1/2 places the transition in the meanfield universality class, which enables far-reaching analogies with other systems in the same class. | es |
dc.description.sponsorship | Junta de Andalucía, Consejería de Transformación Económica, Industria, Conocimiento y Universidadades P18-RT- 1485 | es |
dc.description.sponsorship | Ministerio de Ciencia, Innovación y Universidades RTI2018-094325-B-I00 | es |
dc.format | application/pdf | es |
dc.format.extent | 6 p. | es |
dc.language.iso | eng | es |
dc.publisher | Elsevier | es |
dc.relation.ispartof | Acta Materialia, 234, 117987. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Graphene | es |
dc.subject | Geometrical twinning | es |
dc.subject | Phase transformation | es |
dc.subject | Critical phenomena | es |
dc.title | Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Mecánica de Medios Continuos y Teoría de Estructuras | es |
dc.relation.projectID | P18-RT- 1485 | es |
dc.relation.projectID | RTI2018-094325-B-I00. | es |
dc.relation.publisherversion | https://www.sciencedirect.com/science/article/pii/S1359645422003688?via%3Dihub | es |
dc.identifier.doi | 10.1016/j.actamat.2022.117987 | es |
dc.contributor.group | Universidad de Sevilla. TEP972: Mecánica de Materiales y Estructuras. | es |
dc.journaltitle | Acta Materialia | es |
dc.publication.volumen | 234 | es |
dc.publication.initialPage | 117987 | es |
dc.contributor.funder | Junta de Andalucía, Consejería de Transformación Económica, Industria, Conocimiento y Universidades | es |
dc.contributor.funder | Ministerio de Ciencia, Innovación y Universidades | es |