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dc.creatorArca Cebrián, Franciscoes
dc.creatorMéndez Granado, Juan Pedroes
dc.creatorOrtiz, Michaeles
dc.creatorAriza Moreno, María del Pilares
dc.date.accessioned2022-07-19T11:23:01Z
dc.date.available2022-07-19T11:23:01Z
dc.date.issued2022-08
dc.identifier.citationArca Cebrián, F., Méndez, J.P., Ortiz, M. y Ariza Moreno, M.d.P. (2022). Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene. Acta Materialia, 234, 117987.
dc.identifier.issn1359-6454es
dc.identifier.urihttps://hdl.handle.net/11441/135572
dc.description117987es
dc.description.abstractWe show, through the use of the Landauer-Büttiker (LB) formalism and a tight-binding (TB) model, that the transport gap of twinned graphene can be tuned through the application of a uniaxial strain in the direction normal to the twin band. Remarkably, we find that the transport gap Egap bears a square-root dependence on the control parameter x − c , where x is the applied uniaxial strain and c ∼ 19% is a critical strain. We interpret this dependence as evidence of criticality underlying a continuous phase transition, with x − c playing the role of control parameter and the transport gap Egap playing the role of order parameter. For x < c , the transport gap is non-zero and the material is semiconductor, whereas for x > c the transport gap closes to zero and the material becomes conductor, which evinces a semiconductor-to-conductor phase transition. The computed critical exponent of 1/2 places the transition in the meanfield universality class, which enables far-reaching analogies with other systems in the same class.es
dc.description.sponsorshipJunta de Andalucía, Consejería de Transformación Económica, Industria, Conocimiento y Universidadades P18-RT- 1485es
dc.description.sponsorshipMinisterio de Ciencia, Innovación y Universidades RTI2018-094325-B-I00es
dc.formatapplication/pdfes
dc.format.extent6 p.es
dc.language.isoenges
dc.publisherElsevieres
dc.relation.ispartofActa Materialia, 234, 117987.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectGraphenees
dc.subjectGeometrical twinninges
dc.subjectPhase transformationes
dc.subjectCritical phenomenaes
dc.titleStrain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphenees
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Mecánica de Medios Continuos y Teoría de Estructurases
dc.relation.projectIDP18-RT- 1485es
dc.relation.projectIDRTI2018-094325-B-I00.es
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S1359645422003688?via%3Dihubes
dc.identifier.doi10.1016/j.actamat.2022.117987es
dc.contributor.groupUniversidad de Sevilla. TEP972: Mecánica de Materiales y Estructuras.es
dc.journaltitleActa Materialiaes
dc.publication.volumen234es
dc.publication.initialPage117987es
dc.contributor.funderJunta de Andalucía, Consejería de Transformación Económica, Industria, Conocimiento y Universidadeses
dc.contributor.funderMinisterio de Ciencia, Innovación y Universidadeses

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