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dc.creatorHinojo Montero, José Maríaes
dc.creatorBisquert, Juanes
dc.date.accessioned2021-10-25T15:57:26Z
dc.date.available2021-10-25T15:57:26Z
dc.date.issued2011-08
dc.identifier.citationHinojo Montero, J.M. y Bisquert, J. (2011). Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps. Journal of Applied Physics, 110 (4), 043705-1-043705-6.
dc.identifier.issnISSN: 0021-8979es
dc.identifier.issneISSN: 1089-7550es
dc.identifier.urihttps://hdl.handle.net/11441/126834
dc.description.abstractCharge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a full analysis for the trap-controlled transport of the single-carrier device in the frequency domain. Trap-limited mobility is interpreted in terms of the classical multiple-trapping picture with one transport state and the trapping-detrapping dynamics of the exponential density of traps. This allows us to provide a suitable explanation of the usual experimental features of the mobility dependence on voltage as along with the capacitance spectra.es
dc.description.sponsorshipMinisterio de Economía y Competitividad HOPE CSD2007-00007es
dc.description.sponsorshipGeneralitat Valenciana PROMETEO / 2009/058es
dc.formatapplication/pdfes
dc.format.extent6 p.es
dc.language.isoenges
dc.publisherAmerican Institute of Physicses
dc.relation.ispartofJournal of Applied Physics, 110 (4), 043705-1-043705-6.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectFrequency domain analysises
dc.subjectBand gapses
dc.subjectElectronic devicees
dc.subjectCarrier mobilityes
dc.titleInterpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of trapses
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Ingeniería Electrónicaes
dc.relation.projectIDHOPE CSD2007-00007es
dc.relation.projectIDPROMETEO / 2009/058es
dc.relation.publisherversionhttps://doi.org/10.1063/1.3622615es
dc.identifier.doi10.1063/1.3622615es
dc.journaltitleJournal of Applied Physicses
dc.publication.volumen110es
dc.publication.issue4es
dc.publication.initialPage043705-1es
dc.publication.endPage043705-6es
dc.contributor.funderMinisterio de Economía y Competitividad (MINECO). Españaes
dc.contributor.funderGeneralitat Valencianaes

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