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Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
(American Institute of Physics, 2006-11)
The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy ...
Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
(American Institute of Physics, 2006-11)
The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN 0001 pseudosubstrates is reported. The microstructure and the electron transport in InN ...
Artículo
Coalescence aspects of III-nitride epitaxy
(American Institute of Physics, 2007-03)
In this work, coalescence aspects of wurtzite-III-nitride epitaxy are addressed. The coalescence phenomena have been studied in thin epilayers by means of electron and atomic force microscopies, and electron and x-ray ...
Artículo
Electronic and photoconductive properties of ultrathin InGaN photodetectors
(American Institute of Physics, 2008-04)
We report on the compositional dependencies of electron transport and photoconductive properties for ultrathin metal-semiconductor-metal photodetectors based on In-rich InxGa1-xN alloys. For a In0.64Ga0.36N/GaN structure, ...