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Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
(American Institute of Physics, 2006-11)
The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN 0001 pseudosubstrates is reported. The microstructure and the electron transport in InN ...
Artículo
Electronic and photoconductive properties of ultrathin InGaN photodetectors
(American Institute of Physics, 2008-04)
We report on the compositional dependencies of electron transport and photoconductive properties for ultrathin metal-semiconductor-metal photodetectors based on In-rich InxGa1-xN alloys. For a In0.64Ga0.36N/GaN structure, ...