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Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
(American Institute of Physics, 2006-11)
The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy ...
Artículo
Coalescence aspects of III-nitride epitaxy
(American Institute of Physics, 2007-03)
In this work, coalescence aspects of wurtzite-III-nitride epitaxy are addressed. The coalescence phenomena have been studied in thin epilayers by means of electron and atomic force microscopies, and electron and x-ray ...