- idUS
- Investigación
- Ciencias
- Instituto de Microelectrónica de Sevilla (IMSE-CNM)
- Artículos (Instituto de Microelectrónica de Sevilla (IMSE-CNM))
- Listar Artículos (Instituto de Microelectrónica de Sevilla (IMSE-CNM)) por autor
Listar Artículos (Instituto de Microelectrónica de Sevilla (IMSE-CNM)) por autor "Fiorelli, Rafaella"
Mostrando ítems 1-5 de 5
-
Artículo
LC-VCO design optimization methodology based on the gm/ID ratio for nanometer CMOS technologies
Fiorelli, Rafaella; Peralías Macías, Eduardo; Silveira Noguerol, Fernando (Institute of Electrical and Electronics Engineers, 2011)In this paper, an LC voltage-controlled oscillator (LC-VCO) design optimization methodology based on the gm/ID technique ...
-
Artículo
MOST moderate-weak-inversion region as the optimum design zone for CMOS 2.4-GHz CS-LNAs
Fiorelli, Rafaella; Silveira Noguerol, Fernando; Peralías Macías, Eduardo (Institute of Electrical and Electronics Engineers, 2014)In this paper, the MOS transistor (MOST) moderate-inversion (MI)-weak-inversion (WI) region is shown to be the optimum ...
-
Artículo
Offset-calibration with Time-Domain Comparators Using Inversion-mode Varactors
Fiorelli, Rafaella; Delgado Restituto, Manuel; Rodríguez Vázquez, Ángel Benito (Institute of Electrical and Electronics Engineers, 2019)This paper presents a differential time-domain comparator formed by two voltage controlled delay lines, one per input ...
-
Artículo
On-chip characterization of RF systems based on envelope response analysis
Barragán Asián, Manuel José; Fiorelli, Rafaella; Vázquez García de la Vega, Diego; Rueda Rueda, Adoración; Huertas Díaz, José Luis (Institution of Engineering and Technology, 2010)A simple on-chip procedure for testing embedded RF blocks is presented. It is based on the detection and spectral analysis ...
-
Artículo
Semi-empirical RF MOST model for CMOS 65 nm technologies: theory, extraction method and validation
Fiorelli, Rafaella; Peralías Macías, Eduardo (Elsevier, 2016)This paper presents a simple but accurate semi-empirical model especially focused on 65 nm MOST (MOS transistor) technologies ...