Artículo
SiC CSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
Autor/es | Gerstmann, Uwe
Seitsonen, Ari Paavo Ceresoli, Davide Mauri, Francesco Bardeleben, Hans Jürgen von Cantin, Jean Louis García López, Francisco Javier |
Departamento | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear |
Fecha de publicación | 2010 |
Fecha de depósito | 2021-02-09 |
Publicado en |
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Resumen | The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for ... The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect has been found experimentally also in the cubic 3C-SiC polytype where it is characterized by spin 1/2 and highly anisotropic g values of g xx =2.0030, gyy =2.0241, and gzz =2.0390 within C1h symmetry. The exceptional large g values are explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p -like unpaired electron. |
Identificador del proyecto | GE 1260/3-1 |
Cita | Gerstmann, U., Seitsonen, A.P., Ceresoli, D., Mauri, F., Von Bardeleben, H.J., Cantin, J.L. y García López, F.J. (2010). SiC CSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching. Physical Review B - Condensed Matter and Materials Physics, 81 (19), 195208-. |
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