Artículo
High-Rate Deposition of Stoichiometric Compounds by Reactive Magnetron Sputtering at Oblique Angles
Autor/es | Álvarez Molina, Rafael
García Valenzuela, Aurelio López Santos, Carmen Ferrer, Francisco Rico, Víctor Guillén Guillén, Elena Alcón Camas, M. Escobar-Galindo, Ramón González Elipe, Agustín Rodríguez Palmero Acebedo, Alberto |
Departamento | Universidad de Sevilla. Departamento de Física Aplicada I |
Fecha de publicación | 2016-10 |
Fecha de depósito | 2023-06-13 |
Publicado en |
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Resumen | Target poisoning in reactive magnetron sputtering deposition of thin films is an undesired phenomenon, well known for causing a drastic fall of the process efficiency. We demonstrate that when this technique is operated ... Target poisoning in reactive magnetron sputtering deposition of thin films is an undesired phenomenon, well known for causing a drastic fall of the process efficiency. We demonstrate that when this technique is operated at oblique angles, films with composition raging from pure metallic to stoichiometric compound can be grown in non-poisoned conditions, thus avoiding most of the associated drawbacks. We have employed amorphous TiOx, although the presented results can be easily extrapolated to other materials and conditions. It is found that the proposed method improves 400% the growth rate of TiO2 thin films. |
Agencias financiadoras | Junta de Andalucía Ministerio de Economía y Competitividad (MINECO). España |
Identificador del proyecto | P12-FQM-2265
MAT2013-42900-P MAT2013-40852-R 201560E055 (MINECO-CSIC) |
Cita | Alvarez, R., García Valenzuela, A., López Santos, C., Ferrer, F., Rico, V., Guillén Guillén, E.,...,Palmero Acebedo, A. (2016). High-Rate Deposition of Stoichiometric Compounds by Reactive Magnetron Sputtering at Oblique Angles. Plasma Processes and Polymers, 13 (10), 955-1035. https://doi.org/10.1002/ppap.201600019. |
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