Ponencias (Ingeniería y Ciencia de los Materiales y del Transporte)

URI permanente para esta colecciónhttps://hdl.handle.net/11441/11379

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Examinando Ponencias (Ingeniería y Ciencia de los Materiales y del Transporte) por Materia "Boron doping"

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  • Miniatura
    Acceso AbiertoPonencia
    Heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]
    (2017) Taylor, Andy; Ashcheulov, Petr; Hubík, Pavel; Klimša, Ladislav; Kopeček, Jaromír; Zivcova, Zuzana Vlckova; Remzová, M.; Kavan, Ladislav; Beltrán, Ana M.; Mortet, Vincent; Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte; Yamasaki, Satoshi; Universidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materiales
    Diamond is a unique semiconductor with a wide bandgap which is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal synthetic diamond can reach electrical conductivity of c.a. 103 S.cm, whereas polycrystalline material can reach c.a. 102 S.cm. However, many potential applications are restricted by the deposition temperature and limited coating area of conventional MW PECVD systems. Deposition of boron doped nano-crystalline diamond (BNCD) layers using a microwave PECVD system with linear antenna delivery (MW-LA-PECVD), enabling large area coating, was first reported in 2014. However, layers showed lower electrical conductivity in comparison to layers deposited using conventional PECVD systems. In addition, deposition of BNCD by MW-LA-PECVD is complicated by the necessity for the addition of oxygen species, which are known to limit boron incorporation and the competitive growth of silicon carbide at low CO2 concentrations. In this work, we further investigate the effect of deposition conditions on the synthesis of BNCD using the MW-LA-PECVD technique. In order to produce highly conductive BNCD, we have investigated the effect of CO2 concentration, boron to oxygen ratio and boron to carbon ratio (to well above standard values). The effect of deposition temperature was also studied (from 250 °C up to 750 °C) using temperature controlled substrate stages.
  • Miniatura
    Acceso AbiertoPonencia
    Large area heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]
    (2017) Taylor, Andy; Ashcheulov, Petr; Zivcova, Zuzana Vlckova; Remzová, M.; Kopeček, Jaromír; Hubík, Pavel; Klimša, Ladislav; Remes, Z.; Kavan, Ladislav; Beltrán, Ana M.; Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte; Universidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materiales
    Diamond is a unique semiconductor with a wide bandgap which usually is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal synthetic diamond can reach electrical conductivity as high as 103 S.cm, whereas polycrystalline material usually reaches c.a. 102 S.cm. However, many potential applications are restricted by the deposition temperature and limited coating area of conventional MW PECVD systems. Deposition of boron doped nano-crystalline diamond (BNCD) layers using a microwave PECVD system with linear antenna delivery (MW-LA-PECVD), enabling large area coating, was first reported in 2014 [1]. However, layers showed lower electrical conductivity in comparison to BNCD layers deposited using conventional PECVD systems. In addition, deposition of BNCD by MW-LA-PECVD is complicated by the necessity for the addition of oxygen species, which are known to limit boron incorporation and the competitive growth of silicon carbide at low CO2 concentrations [2, 3]. In this work, we further study the effect of deposition conditions on the synthesis of BNCD using the MW-LA-PECVD technique. In order to produce highly conductive BNCD with a low sp2 fraction, we have investigated in greater detail the effect of deposition temperature, from 250 °C up to 750 °C, using temperature controlled substrate stages and the effect of precursor gas compositions.