Artículos (Centro Nacional de Aceleradores)

URI permanente para esta colecciónhttps://hdl.handle.net/11441/10939

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Examinando Artículos (Centro Nacional de Aceleradores) por Autor "Benndorf, Gabriele"

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    Defect Engineering of Silicon with Ion Pulses from Laser Acceleration
    (Springer Nature, 2023) Redjem, Walid; Amsellem, Ariel J.; Allen, Frances I.; Benndorf, Gabriele; Bin, Jianhui; Bulanov, Stepan; Esarey, Eric; Feldman, Leonard C.; Ferrer Fernández, Francisco Javier; García López, Francisco Javier; Schenkel, Thomas; Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear; Office of Science. EE.UU.
    Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 1019 W cm−2 and ion flux levels of up to 1022 ions cm−2 s−1, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors.