Artículos (Centro Nacional de Aceleradores)

URI permanente para esta colecciónhttps://hdl.handle.net/11441/10939

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Correlation between Mn oxidation state and magnetic behavior in Mn/ZnO multilayers prepared by sputtering
(AIP Publishing, 2007) Céspedes, E.; García López, Francisco Javier; García Hernández, M.; Andrés, A. de; Prieto, C.; Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear
Compositional, microstructural, and magnetic characterization of ZnO 30 Å/Mn x n multilayers prepared by sputtering is presented to study the observed ferromagnetism in the Mn-ZnO system. The nominal Mn layer thickness, x, is varied from 3 to 60 Å, while the number of bilayers, n, is increased to maintain the total amount of Mn constant. Microstructure information was deduced from x-ray reflectivity, Mn oxidation state was determined by x-ray absorption spectroscopy, and magnetic properties were measured over a temperature range of 5–400 K. Magnetic behavior of these samples is found to be related to the Mn layer thickness x. Multilayers with x 30 Å exhibit ferromagnetism with a Curie temperature above 400 K, while mostly paramagnetic behavior is obtained for x15 Å. Magnetic behavior is discussed in terms of electronic and structural parameters of samples. Mn-ZnO interface effect is related to the ferromagnetic order of the samples, but it is not a sufficient condition. The essential role of the Mn oxidation state in the magnetic behavior of this system is pointed out. It is shown a correlation between the obtained ferromagnetism and a Mn oxidation state close to 2+.
Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers
(AIP Publishing, 2009) Céspedes, E.; Román, E.; Huttel, Yves; Chaboy Nalda, Jesús; García López, Francisco Javier; Andrés, A. de; Prieto, C.; Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear
Room temperature ferromagnetism has been obtained for different sets of Mn/Si3N4 multilayers prepared by sputtering. In order to find the most suitable conditions to stabilize the ferromagnetic ordering in this system, the evolution of the magnetic properties has been studied for films in which the Si3N4 layer thickness was maintained constant while that of the Mn layer was varied, Mn tm/Si3N4 3.4 nm n, and conversely, in Mn 0.7 nm/Si3N4 tsn 43 samples, in which the Mn layer thickness was kept constant while varying the Si3N4 layer thickness. Structural, compositional, electronic and magnetic characterizations have been performed by means of x-ray reflectometry, Rutherford backscattering spectrometry, x-ray photoemission spectroscopy, x-ray absorption, and superconducting quantum interference device for further knowledge of the magnetic-structural relationship in this system. Our results show that the peculiar magnetic behavior of these films is mainly related to the stabilization of a slightly distorted Mn3N2 phase that is induced by the Si3N4 at the interfaces. For samples with larger Mn layer thickness, metallic Mn and Mn3N2 phases coexist, which leads to a reduction of the total magnetization per Mn atom due to the presence of metallic Mn. For small Mn layer thickness tm 0.86 nm, where noncontinuous Mn3N2 layers are formed, the magnetization decreases noticeably due to the superparamagnetic size limit. It has been found that the best conditions for the stabilization of the ferromagnetism in this system occur when both, the manganese-rich and the silicon nitride layers, are continuous and with similar thickness, close to 3.5 nm.

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Examinando Artículos (Centro Nacional de Aceleradores) por Autor "Andrés, A. de"