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Artículo
Long range annealing of defects in germanium by low energy plasma ions
(Elsevier, 2015)
Ions arriving at a semiconductor surface with very low energy (2 - 8 eV) are interacting with defects deep inside the semiconductor. Several different defects were removed or modified in Sb-doped germanium, of which the ...
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The origin of defects induced in ultra-pure germanium by Electron Beam Deposition
(Springer, 2015)
The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical ...
Capítulo de Libro
Experimental observation of moving intrinsic localized modes in germanium
(Springer, 2015)
Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units. The plasma ions have energies of 2-8 ...