Buscar
Mostrando ítems 1-1 de 1
Artículo
Electronic state characterization of SiOx thin films prepared by evaporation
(American Institute of Physics, 2005)
SiOx thin films with different stoichiometries from SiO1.3 to SiO1.8 have been prepared by evaporation of silicon monoxide in vacuum or under well-controlled partial pressures of oxygen (P<10–6 Torr). These thin films have ...