ListarArtículos (Centro Nacional de Aceleradores) por materia "high-electron-mobility transistor (HEMT)"
Mostrando ítems 1-1 de 1
-
Artículo
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
(MDPI, 2019)GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which ...