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A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy
(AIP Publishing, 2006)
4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4 1014, 1 1015, and 2 1015 cm−2 with current density of 2.5 A cm−2. The samples were subsequently annealed ...