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Artículo
Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas
(AVS Science and Technology Society, 2003-07)
Silicon dioxide thin films have been prepared at room temperature by remote plasma-enhanced chemical vapor deposition in a downstream reactor by using Si(CH3)3Cl as a volatile precursor and a microwave electron cyclotron ...