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Synthesis, characterization, and photoactivity of InTaO4 and In0.9Ni0.1TaO4 thin films prepared by electron evaporation
(American Vacuum Society, 2010)
InTaO4 and In0.9Ni0.1TaO4 thin films have been prepared by electron evaporation of successive layers of the single oxide components and posterior annealing at T 800 °C. The annealed thin films presented the monoclinic ...