Buscar
Mostrando ítems 1-2 de 2
Artículo
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
(American Institute of Physics, 2006-11)
The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN 0001 pseudosubstrates is reported. The microstructure and the electron transport in InN ...
Artículo
Coalescence aspects of III-nitride epitaxy
(American Institute of Physics, 2007-03)
In this work, coalescence aspects of wurtzite-III-nitride epitaxy are addressed. The coalescence phenomena have been studied in thin epilayers by means of electron and atomic force microscopies, and electron and x-ray ...