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Listar por autor "Martín Holgado, Pedro"
Mostrando ítems 1-3 de 3
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Artículo
Effect of ionizing radiation on quasi-floating gate transistors
Luján Martínez, Clara Isabel; Hinojo Montero, José María; Palomo Pinto, Rogelio; Muñoz Chavero, Fernando; Martín Holgado, Pedro; Morilla García, Yolanda (Elsevier, 2023-10)Low power and low voltage are key in modern design. The quasi-floating gate (QFG) has proven to be an adequate choice in ...
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Artículo
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
Martínez, Pedro J.; Maset, Enrique; Martín Holgado, Pedro; Morilla García, Yolanda (MDPI, 2019)GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which ...
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Artículo
Total Ionizing Dose Effects on a Delay-Based Physical Unclonable Function Implemented in FPGAs
Martín, Honorio; Martín Holgado, Pedro; Morilla García, Yolanda; Entrena, Luis; San Millán, Enrique (MDPI, 2018)Physical Unclonable Functions (PUFs) are hardware security primitives that are increasingly being used for authentication ...