- idUS
- Listar por autor
Listar por autor "Dobos, L."
Mostrando ítems 1-1 de 1
-
Artículo
A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy
Battistig, G.; Khánh, N. Q.; Petrik, P.; Lohner, T.; Dobos, L.; Pécz, B.; García López, Francisco Javier; Morilla García, Yolanda (AIP Publishing, 2006)4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4 1014, ...