Artículo
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
Autor/es | Taboada, Alfonso G.
Sánchez, A. M. Beltrán, Ana M. Bozkurt, M. Alonso-Álvarez, Diego Alén, Benito Rivera, A. Ripalda, José María Llorens Montolio, José Manuel Martín-Sánchez, Javier González Díez, Yolanda Ulloa, J. M. García Martínez, Jorge Manuel Molina, Sergio I. Koenraad, P.M. |
Departamento | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
Fecha de publicación | 2010 |
Fecha de depósito | 2018-01-08 |
Publicado en |
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Resumen | We present experimental evidence of Sb incorporation inside InAs/GaAs 001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by ... We present experimental evidence of Sb incorporation inside InAs/GaAs 001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity. |
Identificador del proyecto | S-505/ENE-310
S-505/ESP/000200 S2009ESP-150 TEC2008-06756-C03-01 CSD2006-00019 CSD2006-00004 |
Cita | Taboada, A.G., Sánchez, A.M., Beltrán, A.M., Bozkur, M., Alonso-Álvarez, D., Alén, B.,...,Koenraad, P.M. (2010). Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. Physical Review B, 82 (23), 235316-1-235316-9. |
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