Presentation
Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy
Author/s | Beltrán, Ana M.
Ben, Teresa Sánchez, A. M. Gass, M.H. Taboada, Alfonso G. Ripalda, José María Molina, Sergio I. |
Director | |
Department | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
Publication Date | 2013 |
Deposit Date | 2018-01-08 |
Published in |
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ISBN/ISSN | 1742-6588 1742-6596 |
Abstract | As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAsGaSb system, since in this energy range the edges ... As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAsGaSb system, since in this energy range the edges corresponding to these elements are better defined than in Core-Loss. Furthermore, the analysis of the bulk plasmon peak, which is present in this energy range, also provides information about the composition. In this work, compositional information in an InAs-GaAs-GaSb heterostructure has been obtained from Low-Loss EEL spectra. |
Project ID. | TEC2011-29120-C05-03
CSD200900013 TEP-120 INNANOMAT TEP-946 PAI |
Citation | Beltrán, A.M., Ben, T., Sánchez, A.M., Gass, M.H., Taboada, A.G., Ripalda, J.M. y Molina, S.I. (2013). Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy. Institute of Physics Publishing. |
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