dc.creator | Vornicu, Ion | es |
dc.creator | Carmona Galán, Ricardo | es |
dc.creator | Rodríguez Vázquez, Ángel Benito | es |
dc.date.accessioned | 2019-12-18T16:09:01Z | |
dc.date.available | 2019-12-18T16:09:01Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Vornicu, I., Carmona Galán, R. y Rodríguez Vázquez, Á.B. (2014). A CMOS 0.18μm 64×64 single photon image sensor with in-pixel 11b time-to-digital converter. En International Semiconductor Conference (CAS) (131-134), Sinaia, Rumanía: Institute of Electrical and Electronics Engineers. | |
dc.identifier.isbn | 978-1-4799-3917-6 | es |
dc.identifier.issn | 1545-827X | es |
dc.identifier.issn | 2377-0678 | es |
dc.identifier.uri | https://hdl.handle.net/11441/91101 | |
dc.description.abstract | The design and characterization of a CMOS 64×64 single-photon avalanche-diode (SPAD) array with in-pixel 11b time-to-digital converter (TDC) is presented. It is targeted for time-resolved imaging, in particular 3D imaging. The achieved pixel pitch is 64μm with a fill factor of 3.5%. The chip was fabricated in a 0.18μm standard CMOS technology and implements a double functionality: Time-of-Flight estimation and photon counting. The imager features a programmable time resolution for the array of TDCs from 625ps down to 145ps. The measured accuracy of the minimum time bin is lower than ±1LSB DNL and 1.7LSB INL. The TDC jitter over the full dynamic range is less than 1LSB. Die-to-die process variation and temperature are discarded by auto-calibration. Fast quenching/restore circuit on each pixel lowers the power consumption by limiting the avalanche currents. Time gatedoperation is possible as well. | es |
dc.description.sponsorship | Office of Naval Research (USA) N000141410355 | es |
dc.description.sponsorship | Ministerio de Economía y Competitividad TEC2012-38921- C02, IPT- 2011-1625-430000, IPC- 20111009 CDTI | es |
dc.description.sponsorship | Junta de Andalucía TIC 2012- 2338 | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers | es |
dc.relation.ispartof | International Semiconductor Conference (CAS) (2014), p 131-134 | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.title | A CMOS 0.18μm 64×64 single photon image sensor with in-pixel 11b time-to-digital converter | es |
dc.type | info:eu-repo/semantics/conferenceObject | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.projectID | N000141410355 | es |
dc.relation.projectID | TEC2012-38921- C02 | es |
dc.relation.projectID | IPT- 2011-1625-430000 | es |
dc.relation.projectID | IPC- 20111009 CDTI | es |
dc.relation.projectID | TIC 2012- 2338 | es |
dc.relation.publisherversion | https://doi.org/10.1109/SMICND.2014.6966414 | es |
dc.identifier.doi | 10.1109/SMICND.2014.6966414 | es |
idus.format.extent | 4 p. | es |
dc.publication.initialPage | 131 | es |
dc.publication.endPage | 134 | es |
dc.eventtitle | International Semiconductor Conference (CAS) | es |
dc.eventinstitution | Sinaia, Rumanía | es |
dc.identifier.sisius | 21210229 | es |