A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology

Brandano, Davide; Delgado Restituto, Manuel; Ruiz Amaya, Jesús; Rodríguez Vázquez, Ángel Benito

doi:10.1109/ECCTD.2007.4529539

Ponencia

dc.creator	Brandano, Davide	es
dc.creator	Delgado Restituto, Manuel	es
dc.creator	Ruiz Amaya, Jesús	es
dc.creator	Rodríguez Vázquez, Ángel Benito	es
dc.date.accessioned	2019-12-04T15:33:24Z
dc.date.available	2019-12-04T15:33:24Z
dc.date.issued	2007
dc.identifier.citation	Brandano, D., Delgado Restituto, M., Ruiz Amaya, J. y Rodríguez Vázquez, Á.B. (2007). A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology. En 18th European Conference on Circuit Theory and Design (72-75), Sevilla, España: Institute of Electrical and Electronics Engineers.
dc.identifier.isbn	978-1-4244-1341-6	es
dc.identifier.uri	https://hdl.handle.net/11441/90722
dc.description.abstract	An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S 11 , S 22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP 3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry.	es
dc.description.sponsorship	Comisión Interministerial de Ciencia y Tecnología TIC2003-02355	es
dc.description.sponsorship	Ministerio de Educación y Ciencia TEC2006-03022	es
dc.format	application/pdf	es
dc.language.iso	eng	es
dc.publisher	Institute of Electrical and Electronics Engineers	es
dc.relation.ispartof	18th European Conference on Circuit Theory and Design (2007), p 72-75
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 Internacional	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/	*
dc.subject	LNA	es
dc.subject	Electrostatic discharge (ESD) protection	es
dc.subject	Noise figure	es
dc.subject	RF CMOS	es
dc.title	A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology	es
dc.type	info:eu-repo/semantics/conferenceObject	es
dcterms.identifier	https://ror.org/03yxnpp24
dc.type.version	info:eu-repo/semantics/acceptedVersion	es
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es
dc.contributor.affiliation	Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo	es
dc.relation.projectID	TIC2003-02355	es
dc.relation.projectID	TEC2006-03022	es
dc.relation.publisherversion	https://doi.org/10.1109/ECCTD.2007.4529539	es
dc.identifier.doi	10.1109/ECCTD.2007.4529539	es
idus.format.extent	4 p.	es
dc.publication.initialPage	72	es
dc.publication.endPage	75	es
dc.eventtitle	18th European Conference on Circuit Theory and Design	es
dc.eventinstitution	Sevilla, España	es
dc.identifier.sisius	5423298	es

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