Article
Enhanced Sensitivity of CMOS Image Sensors by Stacked Diodes
Author/s | Leñero Bardallo, Juan Antonio
Delgado Restituto, Manuel Carmona Galán, Ricardo Rodríguez Vázquez, Ángel Benito |
Department | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Publication Date | 2016 |
Deposit Date | 2019-11-28 |
Published in |
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Abstract | We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare ... We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare photodiodes sensitivity. For this purpose, a dedicated chip in the standard AMS 180-nm HV technology has been fabricated. Four different sensor structures were implemented and compared. Experimental results are provided. Measurements show sensitivity enhancement ranging from 55% to 70% within the 500-1100 nm spectral region. The larger increment is happening in the near infrared band (up to 62%). Such results make stacked photodiodes suitable candidates for the implementation of photosensors in vision chips designed for standard CMOS technologies. |
Project ID. | TEC2012-33634
TEC2015-66878- C3-1-R TIC 2012-2338 N000141410355 |
Citation | Leñero Bardallo, J.A., Delgado Restituto, M., Carmona Galán, R. y Rodríguez Vázquez, Á.B. (2016). Enhanced Sensitivity of CMOS Image Sensors by Stacked Diodes. IEEE Sensors Journal, 16 (23), 8448-8455. |
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