Artículo
Mixed-mode impedance and reflection coefficient of two-port devices
Autor/es | Carrasco, T.
Sieiro, J. Lopez-Villegas, J. M. Vidal, N. González Echevarría, Reinier Roca Moreno, Elisenda |
Fecha de publicación | 2012 |
Fecha de depósito | 2018-09-12 |
Publicado en |
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Resumen | From the point of view of mixed-mode scattering parameters, Smm, a two-port device can be excited using different driving conditions. Each condition leads to a particular set of input reflection and input impedance coefficient ... From the point of view of mixed-mode scattering parameters, Smm, a two-port device can be excited using different driving conditions. Each condition leads to a particular set of input reflection and input impedance coefficient definitions that should be carefully applied depending on the type of excitation and symmetry of the two-port device. Therefore, the aim of this paper is to explain the general analytic procedure for the evaluation of such reflection and impedance coefficients in terms of mixed-mode scattering parameters. Moreover, the driving of a two-port device as a one-port device is explained as a particular case of a two-port mixed-mode excitation using a given set of mixed-mode loads. The theory is applied to the evaluation of the quality factor, Q, of symmetrical and non- symmetrical inductors. |
Agencias financiadoras | Ministerio de Ciencia e Innovación (MICIN). España Junta de Andalucía |
Identificador del proyecto | TEC2010-14825/MIC
TEC2010-21484 TIC-2532 |
Cita | Carrasco, T., Sieiro, J., Lopez-Villegas, J.M., Vidal, N., González Echevarría, R. y Roca Moreno, E. (2012). Mixed-mode impedance and reflection coefficient of two-port devices. Progress in Electromagnetics Research, 130, 411-428. |
Ficheros | Tamaño | Formato | Ver | Descripción |
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MIXED-MODE IMPEDANCE.pdf | 284.3Kb | [PDF] | Ver/ | |