dc.creator | Cecchini, R. | es |
dc.creator | Benítez Jiménez, José Jesús | es |
dc.creator | Sánchez López, Juan Carlos | es |
dc.creator | Fernández Camacho, Asunción | es |
dc.date.accessioned | 2018-03-06T17:45:35Z | |
dc.date.available | 2018-03-06T17:45:35Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Cecchini, R., Benítez Jiménez, J.J., Sánchez López, J.C. y Fernández Camacho, M.A. (2012). Nanoscale mechanically induced structural and electrical changes in Ge 2Sb 2Te 5 films. Journal of Applied Physics, 111, 016101-. | |
dc.identifier.issn | 0021-8979 (impreso) | es |
dc.identifier.issn | 1089-7550 (electrónico) | es |
dc.identifier.uri | https://hdl.handle.net/11441/70840 | |
dc.description.abstract | We demonstrate that the microstructure and electrical properties of Ge 2Sb 2Te 5 films can be changed by a nanoscale mechanical process. Nanoscratching is used to define modified areas onto an as-deposited crystalline Ge 2Sb 2Te 5 film. Scanning tunneling microscopy measurements show that the modified areas have a very low electrical conductivity. Micro-Raman measurements indicate that the mechanically induced microstructural changes are consistent with a phase transformation from crystalline to amorphous, which can be reversed by laser irradiation. | es |
dc.description.sponsorship | Consejo Superior de Investigaciones Científicas 201060E102 | es |
dc.description.sponsorship | Ministerio de Economía y Competitividad CSD2008-00023 | es |
dc.description.sponsorship | Junta de Andalucía TEP217 | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | American Institute of Physics | es |
dc.relation.ispartof | Journal of Applied Physics, 111, 016101-. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.title | Nanoscale mechanically induced structural and electrical changes in Ge 2Sb 2Te 5 films | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.relation.projectID | 201060E102 | es |
dc.relation.projectID | CSD2008-00023 | es |
dc.relation.projectID | TEP217 | es |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.3673592 | es |
dc.identifier.doi | 10.1063/1.3673592 | es |
idus.format.extent | 3 p. | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 111 | es |
dc.publication.initialPage | 016101 | es |