Incorporation of Sb in InAs/GaAs quantum dots

Molina Rubio, Sergio Ignacio; Sánchez, A. M.; Beltrán, Ana M.; Sales, David L.; Ben Fernández, Teresa; Chisholm, M. F.; Varela, María; Pennycook, Stephen J.; Galindo Riaño, Pedro Luis; Papworth, A. J.; Goodhew, P. J.; Ripalda, José María

doi:10.1063/1.2826546

Artículo

dc.creator	Molina Rubio, Sergio Ignacio	es
dc.creator	Sánchez, A. M.	es
dc.creator	Beltrán, Ana M.	es
dc.creator	Sales, David L.	es
dc.creator	Ben Fernández, Teresa	es
dc.creator	Chisholm, M. F.	es
dc.creator	Varela, María	es
dc.creator	Pennycook, Stephen J.	es
dc.creator	Galindo Riaño, Pedro Luis	es
dc.creator	Papworth, A. J.	es
dc.creator	Goodhew, P. J.	es
dc.creator	Ripalda, José María	es
dc.date.accessioned	2018-01-11T17:59:49Z
dc.date.available	2018-01-11T17:59:49Z
dc.date.issued	2007
dc.identifier.citation	Molina Rubio, S.I., Sánchez, A.M., Beltrán, A.M., Sales, D.L., Ben Fernández, T., Chisholm, M.F.,...,Ripalda, J.M. (2007). Incorporation of Sb in InAs/GaAs quantum dots. Applied Physics Letters, 91, 263105-1-263105-3.
dc.identifier.issn	0003-6951	es
dc.identifier.issn	1077-3118	es
dc.identifier.uri	http://hdl.handle.net/11441/68814
dc.description.abstract	The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially resolved low-loss electron energy loss spectroscopy and aberration-corrected high angle annular dark ﬁeld scanning transmission electron microscopy. The intermixing process giving rise to the formation of this quaternary alloy takes place despite the large miscibility gap between InAs and GaSb binary compounds, and is probably driven by the existence of strain in the quantum dots.	es
dc.description.sponsorship	SANDiE European Network of Excellence Contract No. NMP4-CT-2004-500101	es
dc.description.sponsorship	MEC (Spain) TEC2005-05781-C03-01 y 02	es
dc.description.sponsorship	MEC (Spain) NAN2004 -09109-C04-01	es
dc.description.sponsorship	Consolider-Ingenio 2010 CSD2006-00019 and -0004	es
dc.description.sponsorship	CAM S 0505ESP 0200	es
dc.description.sponsorship	Junta de Andalucía PAI research groups TEP-120 and TIC-145; Project No. PAI05-TEP-00383	es
dc.format	application/pdf	es
dc.language.iso	eng	es
dc.publisher	American Institute of Physics	es
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 Internacional	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/	*
dc.subject	Quantum dots	es
dc.subject	Electron energy loss spectroscopy	es
dc.subject	III-V semiconductors	es
dc.subject	Scanning transmission electron microscopes	es
dc.subject	Telecommunications	es
dc.title	Incorporation of Sb in InAs/GaAs quantum dots	es
dc.type	info:eu-repo/semantics/article	es
dcterms.identifier	https://ror.org/03yxnpp24
dc.type.version	info:eu-repo/semantics/publishedVersion	es
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es
dc.contributor.affiliation	Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte	es
dc.relation.projectID	NMP4-CT-2004-500101	es
dc.relation.projectID	TEC2005-05781-C03-01 y 02	es
dc.relation.projectID	NAN2004 -09109-C04-01	es
dc.relation.projectID	CSD2006-00019 and -0004	es
dc.relation.projectID	CAM S 0505ESP 0200	es
dc.relation.projectID	TEP-120 and TIC-145; Project No. PAI05-TEP-00383	es
dc.relation.publisherversion	http://aip.scitation.org/doi/abs/10.1063/1.2826546	es
dc.identifier.doi	10.1063/1.2826546	es
dc.contributor.group	Universidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materiales	es
idus.format.extent	3 p.	es
idus.validador.nota	Sherpa: Publishers version/PDF may be used on author's personal website, arXiv, institutional website, institutional repository, funders designated repository or private forums on social academic network after 12 months embargo	es
dc.journaltitle	Applied Physics Letters	es
dc.publication.issue	91	es
dc.publication.initialPage	263105-1	es
dc.publication.endPage	263105-3	es
dc.identifier.sisius	6712985	es

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