Artículo
Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
Autor/es | Llorens Montolio, José Manuel
Taboada, Alfonso G. Ripalda, José María Alonso-Álvarez, Diego Alén, Benito Martín-Sánchez, Javier García Martínez, Jorge Manuel González Díez, Yolanda Sánchez, A. M. Beltrán, Ana M. Galindo Riaño, Pedro L. Molina Rubio, Sergio Ignacio |
Departamento | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
Fecha de publicación | 2010 |
Fecha de depósito | 2018-01-05 |
Publicado en |
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Resumen | InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier ... InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier of GaAs. We find that the valence band offset is a critical parameter in modelling its electronic structure. Depending on this value, we predict a transition from type-I to type-II band alignment at a different Sb concentration. The addition of Sb to reduce the transition energy while keeping a type-I alignment is only of benefit at low Sb concentration. |
Identificador del proyecto | TEC2008-06756-C03-01/02/TEC
CSD2006-0019 CSD2009-00013 P08-TEP-03516 S2009ESP-150 |
Cita | Llorens Montolio, J.M., Taboada, A.G., Ripalda, J.M., Alonso-Álvarez, D., Alén, B., Martín-Sánchez, J.,...,Molina Rubio, S.I. (2010). Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots. Journal of Physics: Conference Series, 245 (1) |
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