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Artículo

dc.creatorCotrino Bautista, Josées
dc.creatorYanguas Gil, Alejandroes
dc.creatorBarranco Quero, Ángeles
dc.creatorRodríguez González-Elipe, Agustínes
dc.date.accessioned2017-07-18T14:37:33Z
dc.date.available2017-07-18T14:37:33Z
dc.date.issued2006-06-26
dc.identifier.citationCotrino Bautista, J., Yanguas Gil, A., Barranco, A. y González Elipe, A.R. (2006). Influence of the angular distribution function of incident particles on the microstructure and anomalous scaling behavior of thin films. Physical Review Letters, 96 (23), 236101-1-236101-4.
dc.identifier.issn0031-9007 (impreso)es
dc.identifier.issn1079-7114 (electrónico)es
dc.identifier.urihttp://hdl.handle.net/11441/62632
dc.description.abstractThe microstructure and the scaling properties of films grown by plasma enhanced chemical vapor deposition are reproduced with a discrete model that takes into account the angular distribution function of the particles and the lateral growth of the films. Both the experimental and simulated surfaces exhibit a granular microstructure and an anomalous scaling behavior characterized by values of the growth exponent β that vary with the scale of measurement. Depending on the angular distribution function used in the model, values of β ranging from 0.86 to 0.2 are obtained.es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherAmerican Physical Societyes
dc.relation.ispartofPhysical Review Letters, 96 (23), 236101-1-236101-4.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleInfluence of the angular distribution function of incident particles on the microstructure and anomalous scaling behavior of thin filmses
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Física Atómica, Molecular y Nucleares
dc.relation.publisherversionhttps://doi.org/10.1103/PhysRevLett.96.236101es
dc.identifier.doi10.1103/PhysRevLett.96.236101es
idus.format.extent4 p.es
dc.journaltitlePhysical Review Letterses
dc.publication.volumen96es
dc.publication.issue23es
dc.publication.initialPage236101-1es
dc.publication.endPage236101-4es

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