Artículo
A Fully Integrated, Power-Efficient, 0.07–2.08 mA, High-Voltage Neural Stimulator in a Standard CMOS Process
Autor/es | Palomeque Mangut, David
Rodríguez Vázquez, Ángel Benito Delgado Restituto, Manuel |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2022 |
Fecha de depósito | 2024-07-29 |
Publicado en |
|
Resumen | This paper presents a fully integrated high-voltage (HV) neural stimulator with on-chip HV
generation. It consists of a neural stimulator front-end that delivers stimulation currents up to 2.08 mA
with 5 bits resolution ... This paper presents a fully integrated high-voltage (HV) neural stimulator with on-chip HV generation. It consists of a neural stimulator front-end that delivers stimulation currents up to 2.08 mA with 5 bits resolution and a switched-capacitor DC-DC converter that generates a programmable voltage supply from 4.2 V to 13.2 V with 4 bits resolution. The solution was designed and fabricated in a standard 180 nm 1.8 V/3.3 V CMOS process and occupied an active area of 2.34 mm2. Circuit-level and block-level techniques, such as a proposed high-compliance voltage cell, have been used for implementing HV circuits in a low-voltage CMOS process. Experimental validation with an electrical model of the electrode–tissue interface showed that (1) the neural stimulator can handle voltage supplies up to 4 times higher than the technology’s nominal supply, (2) residual charge—without passive discharging phase—was below 0.12% for the whole range of stimulation currents, (3) a stimulation current of 2 mA can be delivered with a voltage drop of 0.9 V, and (4) an overall power efficiency of 48% was obtained at maximum stimulation current. |
Agencias financiadoras | Office of Naval Research (ONR). United States Ministerio de Ciencia e Innovación (MICIN). España Gobierno de España |
Identificador del proyecto | 310 N00014-19-12156
PID2019-110410RB-I00 FPU18/00247 |
Cita | Palomeque Mangut, D., Rodríguez Vázquez, Á.B. y Delgado Restituto, M. (2022). A Fully Integrated, Power-Efficient, 0.07–2.08 mA, High-Voltage Neural Stimulator in a Standard CMOS Process. Sensors, 22 (17), 6429. https://doi.org/10.3390/s22176429. |
Ficheros | Tamaño | Formato | Ver | Descripción |
---|---|---|---|---|
A Fully Integrated, Power-Effi ... | 1.733Mb | [PDF] | Ver/ | |