Article
0.35-V SR-Enhanced Bulk-Driven OTA for Loads up to 10 nF
Author/s | Ballo, Andrea
González Carvajal, Ramón Grasso, Alfio Dario Luján Martínez, Clara Isabel Pennisi, Salvatore Venezia, Chiara |
Department | Universidad de Sevilla. Departamento de Ingeniería Electrónica |
Publication Date | 2024-05-17 |
Deposit Date | 2024-05-21 |
Published in |
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Abstract | This study presents a low-voltage bulk-driven CMOS operational transconductance amplifier (OTA) operating in the subthreshold region designed to drive loads up to 10 nF, which is the largest value for this class of amplifiers. ... This study presents a low-voltage bulk-driven CMOS operational transconductance amplifier (OTA) operating in the subthreshold region designed to drive loads up to 10 nF, which is the largest value for this class of amplifiers. To meet this goal, the solution exploits the body terminal of various active devices leveraging local positive feedback to enhance the input transconductance gain and implementing dynamic threshold voltage control in the output transistors. This, along with a Slew Rate Enhancer section, significantly improves the OTA current driving capability. Experimental measurements conducted on a prototype, implemented in a 60-nm technology and supplied from 0.35 V, confirm the expected performance demonstrating a SR of 1.1 V/ms for a 10-nF load with a limited quiescent current consumption of 1.4 μ A. |
Funding agencies | European Union (NextGeneration EU) Ministerio de Ciencia e Innovación (MICIN). España |
Project ID. | ECS00000022
PID2021-127712OB-C22 TED2021-131075B-I00 |
Citation | Ballo, A., González Carvajal, R., Grasso, A.D., Luján Martínez, C.I., Pennisi, S. y Venezia, C. (2024). 0.35-V SR-Enhanced Bulk-Driven OTA for Loads up to 10 nF. IEEE Transactions on Circuits and Systems I: Regular Papers, 1-9. https://doi.org/10.1109/TCSI.2024.3395472. |
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